Strain-Engineered MOSFETs
| Author | : | |
| Rating | : | 4.93 (555 Votes) |
| Asin | : | 1466500557 |
| Format Type | : | paperback |
| Number of Pages | : | 320 Pages |
| Publish Date | : | 2015-07-06 |
| Language | : | English |
DESCRIPTION:
D. Dobkin said Rent the book, don't buy it.. This is not a terribly good book, although it has a good bit of useful information scattered throughout. The text is readable, but often repetitive. It frequently seems as if the authors have forgotten what they wrote in one section by the time they've moved on to the next. Some chapters appear to have been written 7-8 years ago when industrial use of strained-silicon devices was just starting, so that the technology is presented as promising rather than proven. Nice intro
Enrique MIRANDA,Universitat Autònoma de Barcelona. "… an immensely useful book for the researcher in this field and even for some like me who do not work exactly in this area. … I strongly recommend this book."Dr. Any scientist interested in strain modulation of device properties will value this book."Supriyo Bandyopadhyay,Virginia Commonwealth University"… a timely bridge from the conventional MOSFETs to advanced strain-engineered MOSFETs to non-classical multiple gate devices to FinFETs
It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs).